W29GL032C：
Part No | Voltage | Speed | Temp | Organization |
W29GL032C | 2.7V~3.6V | 70ns | -40℃~85℃ | 4M X8/2M X16 |
◆32k-Word/64k-Byte uniform sector architecture
◆Hight(H)/Low(L) sector Protected
◆Top(T)/Bottom(B) Boot Sector
◆16-Word/32-Byte write buffer
◆8-word/16-Byte page read buffer
◆Secured Silicon Sector area
◆Enhanced Sector Protect using Dynamic and Individual mechanisms
◆Polling/Toggling methods are used to detect the status of program and erase operation
◆Suspend and resume commands used for program and erase operations
◆More than 100,000 erase/program cycles
◆More than 20-year data retention
◆Low power consumption
◆Deep power down mode
◆Wide temperature ranges
◆Faster Erase and Program time
◆CFI(Common Flash Interface) support
◆Single 3V Read/Program/Erase(2.7 - 3.6V)
◆Enhanced Variable IO control
◆#WP/ACC Input
◆Ready/#Busy output(RY/#BY)detects completion of program or erase cycle
W29GL064C：
Part No | Voltage | Speed | Temp | Organization |
W29GL064C | 2.7V~3.6V | 70ns | -40℃~85℃ | 8M X8/4M X16 |
◆32k-Word/64k-Byte uniform sector architecture
◆Hight(H)/Low(L) sector Protected
◆Top(T)/Bottom(B) Boot Sector
◆16-Word/32-Byte write buffer
◆8-word/16-Byte page read buffer
◆Secured Silicon Sector area
◆Enhanced Sector Protect using Dynamic and Individual mechanisms
◆Polling/Toggling methods are used to detect the status of program and erase operation
◆Suspend and resume commands used for program and erase operations
◆More than 100,000 erase/program cycles
◆More than 20-year data retention
◆Low power consumption
◆Deep power down mode
◆Wide temperature ranges
◆Faster Erase and Program time
◆CFI(Common Flash Interface) support
◆Single 3V Read/Program/Erase(2.7 - 3.6V)
◆Enhanced Variable IO control
◆#WP/ACC Input
◆Ready/#Busy output(RY/#BY)detects completion of program or erase cycle